You probably couldn't even build one with vacuum tubes... Totally different technical approach involved,
Soon it might be possible to use vacuum-channel transistors that can switch at several hundred gigahertz, an order of magnitude faster than field effect transistors (FETs) and comparable with graphene transistors.
The vacuum tube strikes back: NASA's tiny 460GHz vacuum transistor that could one day replace silicon FETs - ExtremeTech
Nanoscale vacuum-channel transistor
In fact, vacuum-channel transistors do not need to contain a vacuum. An inert gas such as helium is usually used. The gap between source and drain is so narrow that collisions of electrons with gas molecules are very infrequent even at atmospheric pressure*. Electrons can traverse the gap much faster than a gate electrode on an FET (the velocity of electrons is limited to about 1.4×10^9 m/s in silicon compared with 3x10^10 m/s in a vacuum). I believe the main technical problem to be overcome is degradation of the source electrode over time.
*The mean free path of an electron in air at standard temperature and pressure is 6.8x10^-7m or 680 nanometres - much larger than a nanometre-scale gap. The mean free path in helium should be about twice this value as the kinetic diameter of a helium atom is about 0.7 that of a nitrogen or oxygen molecule.
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